elektronische bauelemente BC727 -3a, -40v pnp silicon general purpose transistor 26-mar-2014 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 7 2 7 = date code rohs compliant product a suffix of -c specifies halogen and lead free features high current output up to -3a low saturation voltage marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -40 v collector to emitter voltage v ceo -30 v emitter to base voltage v ebo -5 v collector currrent i c -3 a total power dissipation @ t c =25 c 3 p d 1.2 w thermal resistance junction-ambient max 1 r jc 105 c/w junction & storage temperature t j , t stg 150, -55 ~ 150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -40 - - v i c = -100 a, i e =0 collector-emitter breakdown voltage v (br)ceo -30 - - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -10 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -30v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 - -0.15 -0.25 i c = -0.5a, i b = -5ma - -0.85 -1 i c = -2a, i b = -20ma collector-emitter saturation voltage 2 v ce(sat) - -0.25 -0.5 v i c = -2a, i b = -200ma - -0.8 -1.1 i c = -0.5a, i b = -5ma base-emitter saturation voltage 2 v be(sat) - -1 -1.5 v i c = -2a, i b = -200ma 30 - - v ce = -2v, i c = -20ma dc current gain 2 h fe 160 - 320 v ce = -2v, i c = -1a transition frequency f t - 80 - mhz v ce = -5v, i c = -100ma, f=100mhz collector output capacitance c ob - 55 - pf v cb = -10v, f=1mhz note: 1. surface mounted on a 1 inch2 fr-4 board with 2oz copper. , 167 /w when mounted on min. copper pad. 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the power dissipation is limited by 150 junction temperature millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.37 ref. b 2.60 3.00 h 0.30 0.55 c 1.20 ref. j - - d 1.40 1.80 k 0.12 ref. e 0.95 ref. l - 0.10 f 0.60 ref. sot-26 a h e f l g j k c d b
elektronische bauelemente BC727 -3a, -40v pnp silicon general purpose transistor 26-mar-2014 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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